| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma etching method capable of forming a contact hole of high aspect ratio while maintaining a vertical sidewall shape by suppressing occurrence of bowing, and to provide a computer recording medium. <P>SOLUTION: The plasma etching method includes a preparation step for examining the correlation between the residual quantity of a mask layer and the bowing CD of hole by plasma etching using a processing gas containing a first processing gas where the ratio (C/F) of carbon and fluorine is the first value, and determining the residual quantity of a mask layer corresponding to a change point where the variation of the bowing CD increases, a first plasma etching step for performing plasma etching until the residual quantity of a mask layer reaches the change point by using the processing gas containing a first processing gas, and a second plasma etching step which is performed after the first plasma etching step. The second plasma etching step includes at least a period of performing plasma etching by using a processing gas containing a second processing gas having the C/F smaller than the first value. <P>COPYRIGHT: (C)2013,JPO&INPIT |
