| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a cutting method which can easily cut a silicon wafer. <P>SOLUTION: Pulse laser light is emitted on condition that the peak power density of a focus point is not lower than 1×10<SP POS="POST">8</SP>(W/cm<SP POS="POST">2</SP>) by focusing the focus pint into the silicon wafer 2a, a melt treatment region 211a is formed in the silicon wafer 2a along a cut-scheduled line by relatively moving the pulse laser light along the cut-scheduled line, and a plurality of fine hollows 211b are formed at a side opposite to the incident side of the pulse laser light with the melt treatment region 211a which is the inside of the silicon wafer 2a sandwiched therebetween so as to be separated from one another along the cut-scheduled line. At this time, a pulse pitch of the pulse laser light is 2.00 μm to 7.00 μm. Then, cracks are generated with a reforming region 211 formed of the melt treatment region 211a and the fine hollows 211b as a starting point, and the silicon wafer 2a is cut along the cut-scheduled line. <P>COPYRIGHT: (C)2013,JPO&INPIT |
