| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processing method of a substrate having a flat surface at an atomic level and having no surface adhesion of silica, silicate, and the like. <P>SOLUTION: The processing method comprises; a first etching process for removing an affected layer of a compound single crystal substrate by etching using a mixed solution of an EDTA chelate compound and EDA; and a second etching process for etching with buffered hydrofluoric acid (BHF) after the first etching process. <P>COPYRIGHT: (C)2013,JPO&INPIT |
