COMPOSITION FOR WASHING PHOTORESIST PATTERN AND FORMING PROTECTIVE LAYER ON PHOTORESIST PATTERN

摘要

PURPOSE: A composition for washing photoresist patterns and forming a protective film is provided to improve line edge roughness and line width roughness of the patterns. CONSTITUTION: A composition for washing photoresist patterns and forming a protective film includes a cross-linking agent represented by chemical formula 1, an acid catalyst, a surfactant, and a solvent. In chemical formula 1, R1 is a C1-15 linear or cyclic aromatic or aliphatic hydrocarbon group with 0 to 5 hetero atoms; and n is an integer from 2 to 6. The content of the cross-linking agent is in a range between 0.1 and 10 weight%. The content of the acid catalyst is in a range between 0.01 and 10 weight%. The content of the surfactant is in a range between 0.01 and 5 weight%. The acid catalyst is selected from a group including acid catalysts represented by chemical formulas 2 to 7 and a mixture of the same.