METHOD FOR THE LIGHT-INDUCED, GALVANIC PULSED DEPOSITION FOR FORMING A SEED LAYER FOR A METAL CONTACT OF A SOLAR CELL AND FOR THE SUBSEQUENT REINFORCEMENT OF SAID SEED LAYER OR SAID METAL CONTACT AND ARRANGEMENT FOR CARRYING OUT THE METHOD

摘要

The present invention relates to a light-induced, galvanic deposition method, wherein the potential difference between a first metal contact and an auxiliary electrode is varied as a function of time according to a predefined voltage/time characteristic and a light radiation on a solar cell is varied as a function of time according to a light radiation/time characteristic.