| 摘要 |
A data input device of a semiconductor memory apparatus includes: a differential amplifier configured to compare an input to a reference voltage and output a differential signal based on the comparison; and a control circuit configured to adjust a current driving capacity of the differential amplifier by turning on a first current path connected to the differential amplifier in response to a first enable signal and turning off a second current path connected to the differential amplifier in response to a second enable signal in a standby mode, wherein, during a time that a plurality of external command signals toggle back and forth between a status of all being high signals and a status of all being low signals repeatedly, the second enable signal is controlled to be maintained at a low state signal. |
