发明名称 Multichip semiconductor device, chip therefor and method of formation thereof
摘要 A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
申请公布号 US8283755(B2) 申请公布日期 2012.10.09
申请号 US201113067180 申请日期 2011.05.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAYASAKA NOBUO;OKUMURA KATSUYA;SASAKI KEIICHI;MATSUO MIE
分类号 H01L29/40;H01L21/768;H01L23/48;H01L23/64;H01L25/065;H01L25/10 主分类号 H01L29/40
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