发明名称 |
Optimized free layer for spin torque magnetic random access memory |
摘要 |
A magnetic tunnel junction stack that includes a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), and a free magnetic layer formed adjacent to the tunnel barrier layer and of a material having a magnetization perpendicular to an MgO interface of the tunnel barrier layer and with a magnetic moment per unit area within a factor of 2 of approximately 2 nanometers (nm)×300 electromagnetic units per cubic centimeter (emu/cm3). |
申请公布号 |
US8283741(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20100684372 |
申请日期 |
2010.01.08 |
申请人 |
HU GUOHAN;SUN JONATHAN Z.;WORLEDGE DANIEL CHRISTOPHER;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HU GUOHAN;SUN JONATHAN Z.;WORLEDGE DANIEL CHRISTOPHER |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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