发明名称 |
Process for restoring dielectric properties |
摘要 |
A method for preparing an interlayer dielectric to minimize damage to the interlayer's dielectric properties, the method comprising the steps of: depositing a layer of a silicon-containing dielectric material onto a substrate, wherein the layer has a first dielectric constant and wherein the layer has at least one surface; providing an etched pattern in the layer by a method that includes at least one etch process and exposure to a wet chemical composition to provide an etched layer, wherein the etched layer has a second dielectric constant, and wherein the wet chemical composition contributes from 0 to 40% of the second dielectric constant; contacting the at least one surface of the layer with a silicon-containing fluid; optionally removing a first portion of the silicon-containing fluid such that a second portion of the silicon-containing fluid remains in contact with the at least one surface of the layer; and exposing the at least one surface of the layer to UV radiation and thermal energy, wherein the layer has a third dielectric constant that is restored to a value that is at least 90% restored relative to the second dielectric constant. |
申请公布号 |
US8283260(B2) |
申请公布日期 |
2012.10.09 |
申请号 |
US20090540395 |
申请日期 |
2009.08.13 |
申请人 |
WEIGEL SCOTT JEFFREY;O'NEILL MARK LEONARD;HAAS MARY KATHRYN;MATZ LAURA M.;MITCHELL GLENN MICHAEL;WU AIPING;VRTIS RAYMOND NICHOLAS;LANGAN JOHN GILES;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
WEIGEL SCOTT JEFFREY;O'NEILL MARK LEONARD;HAAS MARY KATHRYN;MATZ LAURA M.;MITCHELL GLENN MICHAEL;WU AIPING;VRTIS RAYMOND NICHOLAS;LANGAN JOHN GILES |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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