发明名称 NANO/MICRO-SIZED DIODE AND METHOD OF PREPARING THE SAME
摘要 A nano/micro-sized diode and a method of preparing the same, the diode including: a first electrode; a second electrode; and a diode layer that is disposed between the first electrode and the second electrode. The diode layer includes a first layer and a second layer. The first layer is disposed on the first electrode and has a first surface that is electrically connected to the first electrode, and an opposing second surface that has a protrusion. The second layer is disposed between the first layer and the second electrode and has a first surface having a recess that corresponds to the protrusion, and an opposing second surface that is electrically connected to the second electrode.
申请公布号 US2012248584(A1) 申请公布日期 2012.10.04
申请号 US201213490019 申请日期 2012.06.06
申请人 PARK JINHWAN;PARK SUNGHO;SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JINHWAN;PARK SUNGHO
分类号 H01L29/861;H01L21/329 主分类号 H01L29/861
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