| 摘要 |
<p>Provided is a multiple-wavelength optical semiconductor element which can be easily manufactured, while being reduced in size. A semiconductor laser element (1A) is provided with: a GaN substrate (10) in which a main surface (10a) has a first plane orientation; a laser structure part (20) which is grown on a first region of the main surface (10a) and contains an active layer (24); a GaN thin film (40) which is bonded to a second region of the main surface (10a) with a bonding layer (41) being interposed therebetween, said second region being different from the first region, and in which a surface (40a) has a second plane orientation that is different from the first plane orientation; and a laser structure part (30) which is grown on the surface (40a) of the GaN thin film (40) and contains an active layer (34). The active layers (24, 34) respectively have well layers containing In, and the well layers have emission wavelengths different from each other.</p> |
