| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a wiring deposition method capable of obtaining wiring having a desired height even when the wiring is miniaturized. <P>SOLUTION: According to an embodiment, firstly, wiring depositing grooves 12a and 12b are deposited on a sacrificial conductor film 12 deposited on an insulating film 11. Then, Cu is deposited over the entire surface of the sacrificial conductor film 12 having the wiring depositing grooves 12a and 12b deposited thereon, and is reflowed so as to flow within the wiring depositing grooves 12a and 12b, thereby depositing a Cu film 14b within the wiring depositing grooves 12a and 12b. Thereafter, a Cu film 14c is stacked on the Cu film 14b within the wiring depositing grooves 12a and 12b by plating method using the sacrificial conductor film 12 and the Cu film 14b as a current carrying layer. Subsequently, after Cu wiring 14 comprised of the Cu films 14b and 14c is planarized by CMP process, the sacrificial conductor film 12 is removed. Thereafter, an insulating film 15 is deposited on the insulating film 11 with the Cu wiring 14 deposited thereon. <P>COPYRIGHT: (C)2013,JPO&INPIT |
