| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a MOS transistor capable of achieving both source/drain position control and Schottky barrier height control from a protective film edge attached to a sidewall of a gate electrode/gate insulating film to a gate edge in an ultrathin SOIMOS transistor having a metal source/drain. <P>SOLUTION: A manufacturing method of a MOS transistor comprises: a step of forming a gate electrode on an SOI layer; a step of forming a spacer on a side surface of the gate electrode; a step of forming a nitrogen-added Ni film on the SOI layer using the gate electrode and the protective film as a mask; a step of forming a TiN film on the Ni film; a step of forming an epitaxial NiSi<SB POS="POST">2</SB>layer which serves as a source and drain in the SOI layer by performing annealing in a nitrogen atmosphere; a step of removing TiN and a remaining Ni film; a step of implanting P ions into the epitaxial NiSi<SB POS="POST">2</SB>layer using the gate electrode and the protective film as the mask; and a step of activating the P ions. <P>COPYRIGHT: (C)2013,JPO&INPIT |
