发明名称 PLASMA PROCESSING APPARATUS AND MICROWAVE INTRODUCTION DEVICE
摘要 A plasma processing apparatus includes a microwave introduction device which introduces a microwave into a process chamber. The microwave introduction device includes a plurality of microwave transmitting plates which is fitted into a plurality of openings of a ceiling. The microwave transmitting plates are arranged on one virtual plane parallel to a mounting surface of a mounting table, with the microwave transmitting plates fitted into the respective openings. The microwave transmitting plates includes first to third microwave transmitting plates. The first to third microwave transmitting plates are arranged in such a manner that a distance between the center point of the first microwave transmitting window and the center point of the second microwave transmitting window becomes equal or approximately equal to a distance between the center point of the first microwave transmitting window and the center point of the third microwave transmitting window.
申请公布号 US2012247676(A1) 申请公布日期 2012.10.04
申请号 US201213425872 申请日期 2012.03.21
申请人 FUJINO YUTAKA;UEDA ATSUSHI;OZAKI SHIGENORI;KITAGAWA JUNICHI;TOKYO ELECTRON LIMITED 发明人 FUJINO YUTAKA;UEDA ATSUSHI;OZAKI SHIGENORI;KITAGAWA JUNICHI
分类号 C23C16/511;B05C9/00;H01P3/12 主分类号 C23C16/511
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