发明名称 CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES
摘要 <p>A method of chemically-mechanically polishing a substrate having a Group Ill-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group Ill-nitride surface to form a softened Group Ill-nitride surface. The Group Ill-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group Ill-nitride surface. The pad is moved relative to the softened Group Ill-nitride surface, wherein at least a portion of the softened Group Ill-nitride surface is removed.</p>
申请公布号 WO2012135342(A1) 申请公布日期 2012.10.04
申请号 WO2012US30944 申请日期 2012.03.28
申请人 SINMAT, INC.;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;SINGH, RAJIV, K.;ARJUNAN, ARUL, CHAKKARAVARTHI;SINGH, DEEPIKA;MISHRA, ABHUDAYA 发明人 SINGH, RAJIV, K.;ARJUNAN, ARUL, CHAKKARAVARTHI;SINGH, DEEPIKA;MISHRA, ABHUDAYA
分类号 H01L21/321;C09G1/02;C09K3/14 主分类号 H01L21/321
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