CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES
摘要
<p>A method of chemically-mechanically polishing a substrate having a Group Ill-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group Ill-nitride surface to form a softened Group Ill-nitride surface. The Group Ill-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group Ill-nitride surface. The pad is moved relative to the softened Group Ill-nitride surface, wherein at least a portion of the softened Group Ill-nitride surface is removed.</p>
申请公布号
WO2012135342(A1)
申请公布日期
2012.10.04
申请号
WO2012US30944
申请日期
2012.03.28
申请人
SINMAT, INC.;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.;SINGH, RAJIV, K.;ARJUNAN, ARUL, CHAKKARAVARTHI;SINGH, DEEPIKA;MISHRA, ABHUDAYA