发明名称 Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor
摘要 A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.
申请公布号 US8278716(B2) 申请公布日期 2012.10.02
申请号 US20090650078 申请日期 2009.12.30
申请人 PARK BYOUNG-KEON;LEE DONG-HYUN;LEE KIL-WON;YANG TAE-HOON;SEO JIN-WOOK;LEE KI-YONG;AHN JI-SU;LISACHENKO MAXIM;SAMSUNG DISPLAY CO., LTD. 发明人 PARK BYOUNG-KEON;LEE DONG-HYUN;LEE KIL-WON;YANG TAE-HOON;SEO JIN-WOOK;LEE KI-YONG;AHN JI-SU;LISACHENKO MAXIM
分类号 H01L23/62;H01L21/20;H01L21/36;H01L29/10;H01L29/76;H01L31/036;H01L31/112 主分类号 H01L23/62
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