发明名称 |
Method of fabricating polysilicon, thin film transistor, method of fabricating the thin film transistor, and organic light emitting diode display device including the thin film transistor |
摘要 |
A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes. |
申请公布号 |
US8278716(B2) |
申请公布日期 |
2012.10.02 |
申请号 |
US20090650078 |
申请日期 |
2009.12.30 |
申请人 |
PARK BYOUNG-KEON;LEE DONG-HYUN;LEE KIL-WON;YANG TAE-HOON;SEO JIN-WOOK;LEE KI-YONG;AHN JI-SU;LISACHENKO MAXIM;SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK BYOUNG-KEON;LEE DONG-HYUN;LEE KIL-WON;YANG TAE-HOON;SEO JIN-WOOK;LEE KI-YONG;AHN JI-SU;LISACHENKO MAXIM |
分类号 |
H01L23/62;H01L21/20;H01L21/36;H01L29/10;H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L23/62 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|