发明名称 |
Manufacture method for semiconductor device with patterned film of ZrO2 or the like |
摘要 |
An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.
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申请公布号 |
US6998303(B2) |
申请公布日期 |
2006.02.14 |
申请号 |
US20030633534 |
申请日期 |
2003.08.05 |
申请人 |
FUJITSU LIMITED |
发明人 |
SUGITA YOSHIHIRO;MORISAKI YUSUKE;IRINO KIYOSHI;XIAO SHIQIN;OHBA TAKAYUKI |
分类号 |
H01L21/306;H01L21/76;H01L21/265;H01L21/28;H01L21/311;H01L21/316;H01L21/8238;H01L27/092;H01L29/51;H01L29/78 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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