发明名称 Bandgap in CMOS DGO process
摘要 Bandgap voltage reference circuitry capable of operating at very low power supply voltages. The current source for driving the core bandgap voltage reference is implemented with insulated gate field effect transistors having low threshold voltages. Voltage clamp circuitry protects the transistors from power supply voltage variations rising above a predetermined clamp voltage. An output amplifier with output biasing circuitry having a circuit structure similar to that of the core bandgap voltage reference ensures that the bandgap reaches the intended steady state of operation.
申请公布号 US8278995(B1) 申请公布日期 2012.10.02
申请号 US201113005378 申请日期 2011.01.12
申请人 VU LUAN;LUCERO ELROY;NATIONAL SEMICONDUCTOR CORPORATION 发明人 VU LUAN;LUCERO ELROY
分类号 G05F1/10 主分类号 G05F1/10
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