Method for manufacturing photovoltaic device, involves filling pores, cracks or pinholes formed in the lower semiconductor layer by cathodic electrodeposition, before forming upper semiconductor layer

摘要

The method involves forming upper and lower semiconductor layers on a flexible backing layer and a non-noble metal contact electrode that are formed on a substrate. The lower semiconductor layer is composed of cadmium telluride, and an upper semiconductor layer is composed of cadmium sulphide. The pores, cracks or pinholes formed in the lower semiconductor layer are filled by cathodic electrodeposition, before forming upper semiconductor layer.