| 摘要 |
According to an embodiment, a semiconductor light emitting device includes a stacked body, a transparent electrode layer, a first electrode and a second electrode. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The transparent electrode layer is provided on a surface of the second semiconductor layer and transmitting light emitted from the light emitting layer. The first electrode is electrically connected to the transparent electrode layer; and the second electrode is electrically connected to the first semiconductor layer. A region is provided along an edge of the transparent electrode layer with a part of the transparent electrode layer having a thickness smaller on the edge side than a thickness on a central side.
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