| 摘要 |
A fourth n-channel MOSFET has a source terminal and a back-gate terminal connected to each other. A switch element is connected between the source terminal of the fourth n-channel MOSFET and a ground potential, and the source terminal of the fourth n-channel MOSFET is made become the ground potential when the fourth n-channel MOSFET is OFF. A protection circuit is provided between a connection node of the source terminal of the fourth n-channel MOSFET and an input terminal of the switch element, and the ground potential so that a negative inflow current from the drain terminal of the fourth n-channel MOSFET caused by electrostatic discharge flows to the ground potential. |
