| 摘要 |
According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface. |
