| 摘要 |
In a plasma processing apparatus for performing a plasma process on a substrate, a damage on a surface of a mounting table can be suppressed without using a dummy wafer when cleaning an inside of the plasma processing apparatus. Upon the completion of a plasma etching process, a surface of the susceptor 3 is exposed, and an inside of a vacuum chamber 1 of the plasma etching apparatus is cleaned by plasma P. Thus, reaction products A adhering to the inside of the vacuum chamber 1 are removed. Here, a DC voltage is applied to the plasma P during the cleaning process. As a result, while obtaining high-density plasma P, the ion energy can be reduced, so that the cleaning process can be performed effectively while suppressing damage on the surface of the susceptor 3.
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