发明名称 LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING
摘要 Light emitting diodes ("LEDs") with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment.
申请公布号 SG183447(A1) 申请公布日期 2012.09.27
申请号 SG20120062196 申请日期 2011.02.25
申请人 MICRON TECHNOLOGY, INC 发明人 REN, ZAIYUAN;GEHRKE, THOMAS
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