| 摘要 |
<p>This semiconductor device is provided with: a semiconductor layer (2)constituted by a wide bandgap semiconductor disposed on a principal face of a substrate (1); a trench (5) disposed in the semiconductor layer, and having a bottom face, a plurality of principal side faces, and a plurality of corner side faces respectively joining two adjacent principal side faces; a gate insulating film (6) disposed on the bottom face, principal side faces, and the corner side faces of the trench (5); and a gate electrode (8) disposed within the trench. The semiconductor layer includes a drift region (2d) of a first conduction type, and a body region (3) of a second conduction type disposed on the drift region. The trench passes through the body region (3) and has a bottom face in the interior of the drift region. The corner side faces of the trench lack a recessed portion. The gate insulating film (6) is thicker in the sections thereof over the corner side faces of the trench than over the principal side faces of the trench. The section of the gate insulating film (6) situated over the corner side faces constitutes a first insulating layer (6b), and the section of the gate insulating film (6) situated over the principal side faces constitutes a second insulating layer (6a).</p> |
