发明名称 |
SPIN-TORQUE BIT CELL WITH UNPINNED REFERENCE LAYER AND UNIDIRECTIONAL WRITE CURRENT |
摘要 |
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation. |
申请公布号 |
EP2374131(B1) |
申请公布日期 |
2012.09.26 |
申请号 |
EP20090798985 |
申请日期 |
2009.12.02 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
REED, DANIEL;LU, YONG;XUE, SONG;ANDERSON, PAUL |
分类号 |
G11C11/16;G01R33/00;G11B5/66;H01F10/32 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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