发明名称 COMPOSITION, CHEMICAL MECHANICAL POLISHING PAD, AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemical mechanical polishing pad capable of reducing the occurrence of polishing defects (scratches) while improving durability of the polishing pad during dressing in a CMP method. <P>SOLUTION: A composition according to the present invention is a composition for forming a polishing layer of a chemical mechanical polishing pad, and contains (A) polyisocyanate, (B) polyol and (C) a filler. The (C) filler has at least one functional group selected from the group consisting of -NH<SB POS="POST">2</SB>, -NH-, -N=C=O, -NHCONH<SB POS="POST">2</SB>, -COOH and -SH. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012182314(A) 申请公布日期 2012.09.20
申请号 JP20110044242 申请日期 2011.03.01
申请人 JSR CORP 发明人 KUWABARA RIKIMARU
分类号 H01L21/304;B24B37/24 主分类号 H01L21/304
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