ATOMIC LAYER DEPOSITION DEVICE AND ATOMIC LAYER DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide an atomic layer deposition device capable of generating plasma with stability.

SOLUTION: An atomic layer deposition device forming a thin film on a substrate has: a film formation container; a material gas supply part supplying material gas that is a material of the thin film into the film formation container; a reaction gas supply part supplying reaction gas reacting with the material gas to form the thin film into the film formation container; a high-frequency power supply supplying a high-frequency current for generating plasma inside the film formation container; a controller controlling the material gas supply part and the reaction gas supply part so that the material gas and the reaction gas are supplied alternately, and controlling a timing when the high-frequency power supply supplies the high-frequency current; an ignition chamber having an ignition plug; and a valve arranged between the film formation container and the ignition chamber.

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