| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can prevent metal contamination in a semiconductor device having a conductor and formed by removing a plurality of insulating films. <P>SOLUTION: A method of manufacturing a semiconductor device, which has a wiring layer having a conductive pattern and a plurality of insulating films including a first insulating film surrounding side surfaces of the conductive pattern, comprises the steps of: forming the plurality of insulating films on a semiconductor wafer; forming the wiring layer; and forming openings by removing partial regions of the plurality of insulating films after the step of forming the plurality of insulating films on the semiconductor wafer and the step of forming the wiring layer. The first insulating film is disposed up to a position near the outer periphery of the semiconductor wafer, not nearest the outermost periphery of the wafer, of the arrangement position of the conductive pattern. <P>COPYRIGHT: (C)2012,JPO&INPIT |
