发明名称 |
LASERS WITH INGAAS(P) QUANTUM WELLS WITH INDIUM INGAP BARRIER LAYERS WITH REDUCED DECOMPOSITION |
摘要 |
A method for preparing a VCSEL can use MBE for: growing a first conduction region over a first mirror region; growing an active region over the first conduction region opposite of the first mirror region, including: (a) growing a quantum well barrier having In1-xGaxP(As); (b) growing an transitional layer having one or more of GaP, GaAsP, or GaAs; (c) growing a quantum well layer having In1-zGazAsyP1-y; (d) growing another transitional layer have one or more of GaP, GaAsP, or GaAs; (e) repeating processes (a) through (d) over a plurality of cycles; and (f) growing a quantum well barrier having In1- xGaxP(As); growing a second conduction region over the active region opposite of the first conduction region, wherein: x ranges from 0.77 to 0.50; y ranges from 0.7 to 1; and z ranges from 0.7 to 0.99. |
申请公布号 |
WO2012126001(A2) |
申请公布日期 |
2012.09.20 |
申请号 |
WO2012US29658 |
申请日期 |
2012.03.19 |
申请人 |
FINISAR CORPORATION;JOHNSON, RALPH, H.;WADE, JEROME, K. |
发明人 |
JOHNSON, RALPH, H.;WADE, JEROME, K. |
分类号 |
H01S5/34;H01S5/183 |
主分类号 |
H01S5/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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