发明名称 |
NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR |
摘要 |
A manufacturing method of the nano-wire field effect transistor, comprising steps of preparing an SOI substrate having a (100) surface orientation; processing a silicon crystal layer comprising the SOI substrate into a standing plate-shaped member having a rectangular cross-section; processing the silicon crystal layer by orientation dependent wet etching and thermal oxidation into a shape where two triangular columnar members are arranged one above the other with a spacing from each other so as to face along the ridge lines of the triangular columnar members; and processing the two triangular columnar members into a circular columnar member configuring a nano-wire by hydrogen annealing or thermal oxidation. |
申请公布号 |
US2012238082(A1) |
申请公布日期 |
2012.09.20 |
申请号 |
US201213477239 |
申请日期 |
2012.05.22 |
申请人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU |
分类号 |
H01L21/20;B82Y40/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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