RESIST COMPOSITION, AND RESIST FILM AND NEGATIVE PATTERN FORMATION METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a resist composition superior in depth of focus (DOF) when forming an isolated contact hole pattern, and a resist film and a negative pattern formation method using the same.

SOLUTION: A resist composition comprises: a resin (A) including a repeating unit (a) expressed by a following general formula (I-a) or (I-b) and a repeating unit (b) induced from a (meth) acrylic acid ester of tertiary alcohol and substantially excluding a repeating unit including an alcoholic hydroxyl group; and a specific triphenyl sulfonium salt compound (B).

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