METHOD FOR WAFER DICING AND DRILLING THROUGH ANISOTROPIC ETCHING AFTER LOCAL AMORPHIZATION USING LASER BEAM

摘要

PURPOSE: An anisotropic etching method and a dicing and drilling method using the same are provided to prevent the chipping of a wafer in the dicing and drilling operations. CONSTITUTION: A coating layer(20) is formed on one side of a wafer(10). The wafer is comprised of silicon or sapphire. The coating layer is eliminated by radiating laser. An establishment portion of the thickness of the wafer becomes amorphous material. A laser machining portion of the wafer is etched. The coating layer is one among a photosensitive polymer, a silicon nitride, and a silicon oxide.