METHOD FOR WAFER DICING AND DRILLING THROUGH ELECTRIC FIELD ETCHING AFTER LOCAL CRACK FORMATION USING LASER BEAM

摘要

PURPOSE: An electric field etching method and a dicing and drilling method using the same are provided to prevent the generation of a sharp edge after breaking by excluding a thermal influence part. CONSTITUTION: A coating layer(20) is formed on one side of a wafer(S100). The wafer is silicon or sapphire. The coating layer is eliminated by radiating laser to the wafer and the wafer generates cracks(S200). An electric field is applied in a laser machining portion of the wafer(S300). The coating layer is one among a photosensitive polymer, a silicon nitride, and a silicon oxide. [Reference numerals] (AA) Etching fluid of a cation state; (BB) Adding an electric field : electric charge; (CC) Eching completion