发明名称 Silicon based substrate and manufacturing method thereof
摘要 A silicon based substrate includes a silicon wafer, a first circuit substrate and a second circuit substrate. The silicon wafer includes a first surface and a second surface and at least a through silicon via. The first circuit substrate is disposed on the first surface and includes a plurality of first dielectric layers and a plurality of first conductive trace layers alternately stacked. The second circuit substrate is disposed on the second surface and includes a plurality of second dielectric layers and a plurality of second conductive trace layers alternately stacked. The trace density of the first conductive trace layers is higher than the trace density of the second conductive trace layers. Otherwise, the first dielectric layer includes an inorganic material and the second dielectric layer includes an organic material. A manufacturing method of the silicon based substrate is also provided.
申请公布号 US8269316(B2) 申请公布日期 2012.09.18
申请号 US20100831431 申请日期 2010.07.07
申请人 KUO CHIEN-LI;CHENG JUI-HUNG;VICTORY GAIN GROUP CORPORATION 发明人 KUO CHIEN-LI;CHENG JUI-HUNG
分类号 H01L29/40 主分类号 H01L29/40
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