| 摘要 |
The process comprises oxidizing a metal oxide layer (2) on a surface of a first layer (1) made of nitride metal, using an oxidizing plasma species having an oxidation degree that is higher than oxygen, to form a nitride metal layer or a fluoride metal layer, and reducing nitride metal layer using a hydrogen plasma and a nitrogen plasma for forming a second layer made of nitride metal. An independent claim is included for a light emitting diode.
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