NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of improving light emission efficiency by improving an EL light-emitting pattern.

SOLUTION: A nitride semiconductor laser element 100 (a nitride semiconductor light-emitting element) comprises: a GaN substrate 10 having a principal growth plane 10a; and nitride semiconductor layers 11 to 18 each grown on the principal growth plane 10a of the GaN substrate 10. The principal growth plane 10a of the GaN substrate 10 is consisting of a plane having off-angle in each direction of a-axis direction and c-axis direction relative to an m-plane, and the off-angle in the a-axis direction is larger angle than the off-angle in the c-axis direction.

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