| 摘要 |
<p>This end face emission type semiconductor laser element is provided with a two-dimensional photonic crystal (4) formed in a semiconductor layer. The direction of length (X axis) is made one direction of an electrode (8) contact region. When a direction perpendicular to both this direction of length and the direction of thickness of a substrate is made the direction of width (Y axis), the two-dimensional photonic crystal (4), when viewed from the direction perpendicular to the substrate (Z axis), is positioned within a region which is wider in the direction of width than the contact region that includes the contact region for the electrode, and a structure in which the period of the index of refraction changes periodically while each space along the one direction (X axis) satisfies the conditions for Bragg diffraction is provided.</p> |
