ELECTRODE FOR OXIDE SEMICONDUCTOR AND METHOD FOR PRODUCING SAME, AND OXIDE SEMICONDUCTOR DEVICE EQUIPPED WITH ELECTRODE

摘要

The purpose of the present invention is to form a metal electrode having low electric contact resistance on a conductive indium-containing oxide semiconductor layer that serves as an element operation layer in a thin film transistor or the like. A metal oxide layer and a metal layer are arranged between an indium-containing oxide semiconductor layer and a metal electrode layer arranged above the indium-containing oxide semiconductor layer and allowing the flow of an element operation current, wherein a material for each of the metal oxide layer and the metal layer is a metal film which serves as an oxide semiconductor layer and which comprises a metal that can chemically reduce an indium oxide or the like and can be oxidized readily. Further, an indium-rich layer in which reduced indium is accumulated is arranged at an interface between the metal oxide layer and the metal layer.