| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device (thin film transistor) having excellent characteristics. <P>SOLUTION: The method for manufacturing the semiconductor device includes the steps of: (a) forming a conductive layer formed of a semiconductor containing a first metal oxide in the upper part of a substrate SUB; (b) forming a sacrificial layer SL formed of a semiconductor containing a second metal oxide on the conductive layer; (c) processing a laminated film formed by laminating the conductive layer and the sacrificial layer SL; (d) after the step (c), forming a metal film on the sacrificial layer SL; (e) after the step (d), removing a first region of the metal film by dry etching; (f) after the step (e), removing the sacrificial layer SL of the first region by wet etching; and (g) between the step (c) and the step (f), subjecting the conductive layer to a heat treatment so that the conductive layer is crystallized and is formed into a conductive layer CLc. According to such a process, a damaged region DR of the sacrificial layer SL formed by the dry etching can be removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
