| 摘要 |
A plasma generating apparatus and a plasma etching method are provided. The apparatus includes a chamber, a barrier, a susceptor, and a Radio Frequency (RF) power. The chamber forms a reaction space isolated from the external. The barrier divides the chamber into an upper chamber and a lower chamber. The barrier has a plurality of through-holes through formed to communicate the upper chamber and the lower chamber. The susceptor is installed in the lower chamber. The RF power supplies a bias power to the susceptor. |
