DIHALIDE GERMANIUM(II) PRECURSORS FOR GERMANIUM-CONTAINING FILM DEPOSITIONS

摘要

Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5≰n≰2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.