发明名称 |
SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME |
摘要 |
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided. |
申请公布号 |
US2012231622(A1) |
申请公布日期 |
2012.09.13 |
申请号 |
US201213474349 |
申请日期 |
2012.05.17 |
申请人 |
CHEN SHYNG-TSONG;LIN QINGHUANG;PURUSHOTHAMAN SAMPATH;SPOONER TERRY A.;WALSH SHAWN M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN SHYNG-TSONG;LIN QINGHUANG;PURUSHOTHAMAN SAMPATH;SPOONER TERRY A.;WALSH SHAWN M. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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