| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device which easily and securely reduces connection resistance, a connection distance, and the number of connection points between the electrodes and achieves adequate thickness reduction while shortening the processes. <P>SOLUTION: A sealing layer 20 where a connection conductive film 24 is formed on its surface is contacted so that the connection conductive film 24 contacts with electrodes 10a to 10d of a compound semiconductor element 10 provided on a lead frame 11, each lead 11a to 11c, and the lead frame 11. The electrodes 10a to 10d are electrically connected with the respective leads 11a to 11c and the lead frame 11 by the connection conductive film 24, and the compound semiconductor element 10 is sealed by the sealing layer 20. <P>COPYRIGHT: (C)2012,JPO&INPIT |
