| 摘要 |
PURPOSE: A method for manufacturing a vertical light emitting diode using a wet etched buffer layer is provided to manufacture the light emitting diode at low cost comparing to a laser off technology by separating a substrate and a light emitting diode device using the wet etched buffer layer. CONSTITUTION: A buffer layer including an unevenness section is formed on a substrate. The size of the each unevenness section is 10nm to 10μm. An N type semiconductor, an active layer and a P type semiconductor are successively formed on the upper part of the buffer layer. A metal support layer is formed on the P type semiconductor. The buffer layer is removed by wet etching. [Reference numerals] (AA,FF,LL) Metal support layer; (BB,GG,KK) P-type semiconductor; (CC,HH,JJ) N-type semiconductor; (DD) Nano pyramid buffer layer; (EE,II) Substrate; (MM) Active layer
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