发明名称 |
Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device |
摘要 |
In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure. |
申请公布号 |
US8265113(B2) |
申请公布日期 |
2012.09.11 |
申请号 |
US20100837184 |
申请日期 |
2010.07.15 |
申请人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
YOSHIZUMI YUSUKE;TAKAGI SHIMPEI;IKEGAMI TAKATOSHI;UENO MASAKI;KATAYAMA KOJI |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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