| 发明名称 |
LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS |
| 摘要 |
A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane. |
| 申请公布号 |
KR20120099709(A) |
申请公布日期 |
2012.09.11 |
| 申请号 |
KR20127014201 |
申请日期 |
2010.11.03 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
LANGE FREDERICK F.;RICHARDSON JACOB J.;THOMPSON DANIEL B.;KOSLOW INGRID;HA, JUN SEOK;DENBAARS STEVEN P.;NAKAMURA SHUJI |
| 分类号 |
H01L33/28;H01L33/16;H01L33/22 |
主分类号 |
H01L33/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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