| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and a charged particle beam lithography method that minimize a decrease in throughput and improve roughness without making resist large in film thickness. <P>SOLUTION: A relation among area density of a pattern, an irradiation amount of an electron beam, and edge roughness of the pattern is found, and based upon area density of the pattern and an irradiation amount of the electron beam in a predetermined area, it is determined whether the edge roughness of the pattern is equal to or smaller than an allowable value using the relation. When the edge roughness exceeds the allowable value, a resizing amount for making the area density of the pattern small is calculated, the area density of the pattern resized based upon the resizing amount and the irradiation amount of the electron beam in the area are found based upon the resizing amount, and a process of determining whether the edge roughness of the pattern is equal to or smaller than the allowable value using the relation is repeated until the edge roughness becomes equal to or smaller than the allowable value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
