| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with an increased amount of light emission which suppresses increase of forward voltage. <P>SOLUTION: A semiconductor light-emitting device 1 comprises: a substrate 110; an intermediate layer 120 stacked on the substrate 110; a ground layer 130 stacked on the intermediate layer 120; an n-type semiconductor layer 140 stacked on the ground layer 130; a light-emitting layer 150 stacked on the n-type semiconductor layer 140; a p-type semiconductor layer 160 stacked on the light-emitting layer 150; and a translucent electrode 170 that is stacked on the p-type semiconductor layer 160 and has translucency to light emitted from the light-emitting layer 150. In the translucent electrode 170, through holes 180 are provided so that a ratio (an opening ratio) in which the surface of the p-type semiconductor layer 160 is exposed is different from a region (C) adjacent to a first-type electrode 190 and a region (A) adjacent to a second-type electrode 200. <P>COPYRIGHT: (C)2012,JPO&INPIT |
