发明名称 POWER SEMICONDUCTOR MODULE STRUCTURE AND MANUFACTURING METHOD OF THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide power semiconductor module structure which can prevent damage of an insulation substrate in resin molding and occurrence of a resin burr by use of a simple structure manufacturing apparatus even though the insulation substrate has a relatively large thickness tolerance. <P>SOLUTION: In manufacturing a power semiconductor module 1, in a state where a semiconductor is mounted on an insulation substrate 1A provided with metal patterns 1b and 1c on both surfaces sandwiching an insulation layer 1a, those components are molded by a resin 2, and the metal pattern 1b provided on the surface of the insulation substrate 1A opposite to the surface on which the semiconductor is mounted is exposed outside on the molding resin 2. A push stick bearing member 5 for bearing a push stick 11a provided on a mold 11 used in molding of the power semiconductor module 1 is provided on the insulation substrate 1A via a temperature deformation member 6 melting at a high temperature and coagulating at a room temperature. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012174747(A) 申请公布日期 2012.09.10
申请号 JP20110032761 申请日期 2011.02.18
申请人 CALSONIC KANSEI CORP 发明人
分类号 H01L25/07;H01L21/56;H01L23/29;H01L25/18 主分类号 H01L25/07
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